GaN Systems GS665xxT GaN E-HEMT Daughter Boards

Author : Gan systems Published Time : 2015-10-30
GaN Systems GS665xxT GaN E-HEMT Daughter Boards are designed to work with the GS665MB-EVB 650V Universal Motherboard. The GS665xxT Daughter Boards each consist of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half bridge gate drivers, isolated power supplies, and an optional heatsink to form a functional half bridge power stage. Developers can easily evaluate the GaN E-HEMT performance in any half bridge-based topology when used with the GS665MB-EVB Universal Motherboard.

Features

Serves as a reference design and evaluation tool as well as deployment-ready solution for easy insystem evaluationVertical mount style with height of 35mm, which fits in majority of 1U design and allows evaluation of GaN E-HEMT in traditional through-hole type power supply board

Design Resources

Gerber Design File
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