Samsung Semiconductor - K4A4G165WF-BCTD

KEY Part #: K7359587

[26724pcs තොගය]

කොටස් අංකය:: K4A4G165WF-BCTD

නිෂ්පාදක:: Samsung Semiconductor

විස්තරාත්මක සටහන:: 4 Gb 256M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

Manufacturer's standard lead time:: ගබඩාවේ ඇත

රාක්ක ජීවිතය:: අවුරුද්දක්

සිට චිප්:: හොංකොං

RoHS:

ගෙවීමේ ක්රමය:

නැව්ගත කිරීමේ මාර්ගය:

පවුල් කාණ්ඩ:: KEY Components Co., LTD යනු ඉලෙක්ට්‍රොනික සංරචක බෙදාහරින්නෙකු වන අතර ඔහු නිෂ්පාදන කාණ්ඩ ඉදිරිපත් කරයි: LPDDR5, LPDDR4, DDR4, HBM Aquabolt, GDDR6, GDDR5, HBM Flarebolt and LPDDR4X ...

තරඟකාරී වාසිය:: We specialize in Samsung Semiconductor K4A4G165WF-BCTD electronic components. K4A4G165WF-BCTD can be shipped within 24 hours after order. If you have any demands for K4A4G165WF-BCTD, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

K4A4G165WF-BCTD නිෂ්පාදන ගුණාංග

කොටස් අංකය : K4A4G165WF-BCTD

නිෂ්පාදක : Samsung Semiconductor

විස්තර : 4 Gb 256M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production

මාලාවක් : DDR4

ඝනත්වය : 4 Gb

Org. : 256M x 16

වේගය : 2666 Mbps

වෝල්ටියතාවය : 1.2 V

තාවකාලික. : 0 ~ 85 °C

පැකේජය : 96FBGA

නිෂ්පාදන තත්ත්වය : Mass Production

නවතම ප්රවෘත්ති

[Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions

Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards

Samsung Z-SSD SZ985

Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP

Evolving Mobile Solutions: Samsung at MWC 2018

Automotive Driven by Small Packages Under the Hood

High Bandwidth Memory is Catching on for Data-intensive Computing

Bringing Artificial Intelligence to Devices Everywhere

Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology

Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI

Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology

Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day

ඔබත් උනන්දු විය හැකිය

K4A4G085WE-BIRC

Samsung Semiconductor

4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.
K4ABG165WA-MCWE

Samsung Semiconductor

32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.
K4A4G085WE-BITD

Samsung Semiconductor

4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.
K4A4G085WF-BCTD

Samsung Semiconductor

4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.
K4A4G085WF-BITD

Samsung Semiconductor

4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.
K4A4G165WE-BCWE

Samsung Semiconductor

4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

උණුසුම් කොටස්

English සිංහල