Samsung Semiconductor - K4F2E3S4HA-GHCL

KEY Part #: K7359757

[18111pcs තොගය]

කොටස් අංකය:: K4F2E3S4HA-GHCL

නිෂ්පාදක:: Samsung Semiconductor

විස්තරාත්මක සටහන:: 12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.

Manufacturer's standard lead time:: ගබඩාවේ ඇත

රාක්ක ජීවිතය:: අවුරුද්දක්

සිට චිප්:: හොංකොං

RoHS:

ගෙවීමේ ක්රමය:

නැව්ගත කිරීමේ මාර්ගය:

පවුල් කාණ්ඩ:: KEY Components Co., LTD යනු ඉලෙක්ට්‍රොනික සංරචක බෙදාහරින්නෙකු වන අතර ඔහු නිෂ්පාදන කාණ්ඩ ඉදිරිපත් කරයි: DDR3, HBM Flarebolt, LPDDR5, LPDDR3, MODULE, GDDR5, HBM Aquabolt and LPDDR4 ...

තරඟකාරී වාසිය:: We specialize in Samsung Semiconductor K4F2E3S4HA-GHCL electronic components. K4F2E3S4HA-GHCL can be shipped within 24 hours after order. If you have any demands for K4F2E3S4HA-GHCL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

K4F2E3S4HA-GHCL නිෂ්පාදන ගුණාංග

කොටස් අංකය : K4F2E3S4HA-GHCL

නිෂ්පාදක : Samsung Semiconductor

විස්තර : 12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

මාලාවක් : DDR3

ඝනත්වය : 12 Gb

Org. : x32

වේගය : 4266 Mbps

වෝල්ටියතාවය : 1.8 / 1.1 / 1.1 V

තාවකාලික. : -40 ~ 105 °C

පැකේජය : 200FBGA

නිෂ්පාදන තත්ත්වය : Mass Production

නවතම ප්රවෘත්ති

Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology

Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package

Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards

Driving the Artificial Intelligence Evolution with In-Memory Computing

Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification

Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology

Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM

Mission Peak Reference Server System for NGSFF SSD

Inside the building blocks of the 5G future

Speed for the next generation of mobile devices

Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day

The future of NAND technology

ඔබත් උනන්දු විය හැකිය

M392A2K43BB0-CPB

Samsung Semiconductor

DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.
M392A2K43BB0-CRC

Samsung Semiconductor

DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.
M392A4K40BM0-CPB

Samsung Semiconductor

DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.
M392A4K40BM0-CRC

Samsung Semiconductor

DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.
M378A1K43BB1-CPB

Samsung Semiconductor

DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
M378A1K43BB2-CRC

Samsung Semiconductor

DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

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