Samsung Semiconductor - K4U8E3S4AD-GHCL

KEY Part #: K7359746

[14282pcs තොගය]

කොටස් අංකය:: K4U8E3S4AD-GHCL

නිෂ්පාදක:: Samsung Semiconductor

විස්තරාත්මක සටහන:: 8 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 105 °C 200FBGA Mass Production.

Manufacturer's standard lead time:: ගබඩාවේ ඇත

රාක්ක ජීවිතය:: අවුරුද්දක්

සිට චිප්:: හොංකොං

RoHS:

ගෙවීමේ ක්රමය:

නැව්ගත කිරීමේ මාර්ගය:

පවුල් කාණ්ඩ:: KEY Components Co., LTD යනු ඉලෙක්ට්‍රොනික සංරචක බෙදාහරින්නෙකු වන අතර ඔහු නිෂ්පාදන කාණ්ඩ ඉදිරිපත් කරයි: HBM Flarebolt, LPDDR4X, LPDDR3, LPDDR5, DDR4, SLC Nand, LPDDR4 and GDDR6 ...

තරඟකාරී වාසිය:: We specialize in Samsung Semiconductor K4U8E3S4AD-GHCL electronic components. K4U8E3S4AD-GHCL can be shipped within 24 hours after order. If you have any demands for K4U8E3S4AD-GHCL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

K4U8E3S4AD-GHCL නිෂ්පාදන ගුණාංග

කොටස් අංකය : K4U8E3S4AD-GHCL

නිෂ්පාදක : Samsung Semiconductor

විස්තර : 8 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 105 °C 200FBGA Mass Production

මාලාවක් : DDR3

ඝනත්වය : 8 Gb

Org. : x32

වේගය : 4266 Mbps

වෝල්ටියතාවය : 1.8 / 1.1 / 0.6 V

තාවකාලික. : -40 ~ 105 °C

පැකේජය : 200FBGA

නිෂ්පාදන තත්ත්වය : Mass Production

නවතම ප්රවෘත්ති

Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology

Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones

Automotive Driven by Small Packages Under the Hood

The future of NAND technology

Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM

How Will 5G Impact on Memory?

Speed for the next generation of mobile devices

Driving the Artificial Intelligence Evolution with In-Memory Computing

Unlocking the Power of Cloud Computing

Evolving Mobile Solutions: Samsung at MWC 2018

Samsung Z-SSD SZ985

The Ultra-Low Latency SSD, Z-SSD

ඔබත් උනන්දු විය හැකිය

M378A1K43BB1-CPB

Samsung Semiconductor

DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
M378A1K43BB2-CRC

Samsung Semiconductor

DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
M378A1K43BB2-CTD

Samsung Semiconductor

DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
M378A1K43CB2-CPB

Samsung Semiconductor

DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.
M378A1K43CB2-CRC

Samsung Semiconductor

DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.
M378A1K43CB2-CTD

Samsung Semiconductor

DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

උණුසුම් කොටස්

English සිංහල