Samsung Semiconductor - K4B1G0846I-BYMA

KEY Part #: K7359637

[14807pcs තොගය]

කොටස් අංකය:: K4B1G0846I-BYMA

නිෂ්පාදක:: Samsung Semiconductor

විස්තරාත්මක සටහන:: 1 Gb 128M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

Manufacturer's standard lead time:: ගබඩාවේ ඇත

රාක්ක ජීවිතය:: අවුරුද්දක්

සිට චිප්:: හොංකොං

RoHS:

ගෙවීමේ ක්රමය:

නැව්ගත කිරීමේ මාර්ගය:

පවුල් කාණ්ඩ:: KEY Components Co., LTD යනු ඉලෙක්ට්‍රොනික සංරචක බෙදාහරින්නෙකු වන අතර ඔහු නිෂ්පාදන කාණ්ඩ ඉදිරිපත් කරයි: HBM Aquabolt, DDR4, HBM Flarebolt, DDR3, MODULE, GDDR6, SLC Nand and LPDDR5 ...

තරඟකාරී වාසිය:: We specialize in Samsung Semiconductor K4B1G0846I-BYMA electronic components. K4B1G0846I-BYMA can be shipped within 24 hours after order. If you have any demands for K4B1G0846I-BYMA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

K4B1G0846I-BYMA නිෂ්පාදන ගුණාංග

කොටස් අංකය : K4B1G0846I-BYMA

නිෂ්පාදක : Samsung Semiconductor

විස්තර : 1 Gb 128M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production

මාලාවක් : DDR3

ඝනත්වය : 1 Gb

Org. : 128M x 8

වේගය : 1866 Mbps

වෝල්ටියතාවය : 1.35 V

තාවකාලික. : 0 ~ 85 °C

පැකේජය : 78FBGA

නිෂ්පාදන තත්ත්වය : Mass Production

නවතම ප්රවෘත්ති

Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology

Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package

5G and Memory - from Connected Thinking to Connected Living

Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology

Samsung Memory Solutions for Automotive

An Exclusive Look Inside Samsung’s Memory Exhibit at MWC

Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering

Autonomous Driving and the Quest for Safety

Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology

Mass Production of Fifth-Generation V-NAND has Started

Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing

Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM

ඔබත් උනන්දු විය හැකිය

K3UH5H50AM-AGCL

Samsung Semiconductor

32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.
K3UH5H50AM-EGCL

Samsung Semiconductor

32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.
K3UH5H50AM-JGCL

Samsung Semiconductor

32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.
K3UH6H60BM-AGCL

Samsung Semiconductor

48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.
K3UH6H60BM-EGCL

Samsung Semiconductor

48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.
K3UH7H70AM-AGCL

Samsung Semiconductor

64 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

උණුසුම් කොටස්

English සිංහල